XView

Command

Argument

settings

-version

Followed by an integer specifying the version. Needs to be 3.

[-N]

Followed by an integer specifying the number columns used for the process simulation. The default is 1000 columns. It is followed by a whole number from 200 (fast execution low resolution) to 2000 (slow execution high resolution).

[-angle]

Followed by and integer 0 to 89 specifying the camera angle with respect to the horizontal in degrees.  The default is 30.

[-use_nm]

If present, specifies that nm units are used for location (location command) and resolution dimensions (photo command). If not present, these dimensions are in micron units. Vertical dimensions are always in nm so having this parameter or not has no effect.

-height

If present, a height map is shown. The heights are iwith respect to the substrate surface in angstrom units.

-legend

If present, a layer legend with material names is included to the left of the cross section.

gds

-cell

Followed by a string without spaces specifying the GDS cell name the cross section is taken from.

location

-x

Followed by a decimal number specifying the x coordinate of the cross section cut in the cell specified by the gds command above. Either in um or nm (see the -use_nm argument of setting).

-y

Followed by a decimal number specifying the y coordinate of the cross section cut. Either in um or nm (see the -use_nm argument of setting).

-dx

Followed by decimal number specifying the width of the cross section cut. Either in um or nm (see the -use_nm argument in the settings command above).

-dy

Followed by decimal number specifying the horizonal height of the cross section cut. Either in um or nm (see the -use_nm argument in the settings command above).

deposition

-name

Followed by a string without spaces specifying the name of the material deposited. The name can not be used in previous deposition or coating steps: each material deposited or coated needs to have a unique name.

-type

Followed by a string specifying the type of material being deposited in this layer. It can be same type name as of a material deposited or coated earlier.

-thickness

Followed by a decimal number with the thickness of the material to be deposited in nm.

[-sc]

Followed by a decimal number from 0.0 (default) to 1.0 specifying the step coverage of the deposition as fraction of the film thickness.

[-color]

Followed by 4 integers specifies the layer color in the RGBL format. The first three specify the R, G, and B values from 0 to 255. The fourth integer specifies a luminance percentage from 0 to 100. If this argument is not given the -scolor argument (below) is mandatory.

[-scolor]

Followed by a string without spaces specifying the layer color following the X11 color standard. It is followed by a string (no spaces allowed) specifying a X11 standard color. If this argument is not given, the -color argument (above) is mandatory.

[-alpha]

Followed by a decimal number from 0.0 to 1.0 specifying the transparency of the layer color. Here 0.0 is completely transparent and 1.0 is completely opaque.

coating

-name

See the -name argument of the deposition command.

-type

See the -type argument of the deposition command.

-thickness

See the -thickness argument of the deposition command.

[-dop]

Followed by a decimal number from 0.0 to 1.0 (default) specifying the degree of planarization of the coating step. A degree of planarization of 1.0 will result in a flat film regardless of the underlying topography while 0.0 will result in a conformal film.

[-rr]

Followed by a decimal number from 0.0 (default) to 1.0 specifying a material reflow as fraction of the thickness of the layer.

[-color]

As the -scolor argument of the deposition command.

[-scolor]

As the -scolor argument of the deposition command.

[-alpha]

As the -alpha argument of the deposition command.

photo

-name

Followed by a string without spaces specifying the name of this photo step.

-mask_id

Followed by an integer 0 to 65535 that specifies the GDS mask layer number for the mask in this photo step.

-type

Followed by an integer 0 (clear type) to 1 (dark type) specifying the mask type to be used.

-res

Followed by a decimal number larger or equal to 0.0 specifying the resolution of the photo tool for this mask step in um or nm (see the -use_nm argument in the settings command above). For example, for an I line stepper used to make TFTs in the display industry or old semiconductor processes this could be 1.5 um. For a modern EUV process this could be down to around 14 nm. A value of 0.0 means that the photo patterning follows exactly the mask. This is not realistic, but still can be used for illustration purposes.

[-taper]

Followed by an integer 0 to 90 (default) specifying the taper angle of the photo resist generated by the photo step.  A shallow taper angle on a high aspect ratio photo resist pattern can give undesired results and the taper angle will be automatically corrected.

[-thickness]

Followed by a decimal number that specifies the photo resist thickness.

[-dop]

As the -dop argument in the coating process.

[-rr]

As the -rr argument in the coating process.

etch

-name

Followed by a string without spaces specifying the name of this etch step.

-depth

A decimal number that specifies the etch depth in nm.

-targets

Followed by a one or more strings without spaces that specify the material types to be etched. The material types need to have been defined as the -type argument of deposition of coating in previous process steps.

[-iso]

Followed by a decimal number from 0.0 (default) to 1.0 that specifies the directionality of the etch with 0.0 anisotropic and 1.0 isotropic.

strip

-name

Followed by a string without spaces specifying the name of this photo resist strip step.

release

-name

Followed by a string without spaces specifying the name of this material release step.

-targets

Followed by a one or more strings without spaces that specify the material types to be released. The material types need to have been defined as the -type argument of deposition of coating in previous process steps.